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| HS-5104ARH Data Sheet August 1999 File Number 3025.3 Radiation Hardened Low Noise Quad Operational Amplifier The HS-5104ARH is a radiation hardened, monolithic quad operational amplifier that provides highly reliable performance in harsh radiation environments. Its excellent noise characteristics coupled with an unique array of dynamic specifications make this amplifier well-suited for a variety of satellite system applications. Dielectrically isolated, bipolar processing makes this device immune to Single Event Latch-Up. The HS-5104ARH shows almost no change in offset voltage after exposure to 100kRAD(Si) gamma radiation, with only a minor increase in current. Complementing these specifications is a post radiation open loop gain in excess of 40K. This quad operational amplifier is available in an industry standard pinout, allowing for immediate interchangeability with most other quad operational amplifiers. Specifications for Rad Hard QML devices are controlled by the Defense Supply Center in Columbus (DSCC). The SMD numbers listed here must be used when ordering. Detailed Electrical Specifications for these devices are contained in SMD 5962-95690. A "hot-link" is provided on our homepage for downloading. http://www.intersil.com/spacedefense/space.htm Features * Electrically Screened to SMD # 5962-95690 * QML Qualified per MIL-PRF-38535 Requirements * Radiation Environment - Gamma Dose () . . . . . . . . . . . . . . . . . 1 x 105RAD(Si) * Low Noise - At 1kHz . . . . . . . . . . . . . . . . . . . . . . . . 4.3nV/Hz (Typ) - At 1kHz . . . . . . . . . . . . . . . . . . . . . . . . 0.6pA/Hz (Typ) * Low Offset Voltage . . . . . . . . . . . . . . . . . . . . 3.0mV (Max) * High Slew Rate . . . . . . . . . . . . . . . . . . . . . . 2.0V/s (Typ) * Gain Bandwidth Product . . . . . . . . . . . . . . . 8.0MHz (Typ) Applications * High Q, Active Filters * Voltage Regulators * Integrators * Signal Generators * Voltage References * Space Environments Ordering Information ORDERING NUMBER 5962R9569001V9A 5962R9569001VCC 5962R9569001VXC INTERNAL MKT. NUMBER HS0-5104ARH-Q HS1-5104ARH-Q HS9-5104ARH-Q TEMP. RANGE (oC) 25 -55 to 125 -55 to 125 -55 to 125 HS1-5104ARH/PROTO HS1-5104ARH/PROTO Pinouts HS-5104ARH (SBDIP) CDIP2-T14 TOP VIEW OUT 1 -IN1 +IN1 V+ +IN2 -IN2 OUT 2 1 2 3 4 5 6 7 14 13 12 11 10 9 8 OUT 4 -IN4 +IN4 V+IN3 -IN3 OUT 3 OUT 1 -IN1 +IN1 V+ +IN2 -IN2 OUT 2 HS-5104ARH (FLATPACK) CDFP3-F14 TOP VIEW 1 2 3 4 5 6 7 14 13 12 11 10 9 8 OUT 4 -IN4 +IN4 V+IN3 -IN3 OUT 3 1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 321-724-7143 | Copyright (c) Intersil Corporation 1999 HS-5104ARH Burn-In Circuit 1 2 R1 3 +V C1 4 D1 R2 5 6 7 + 2 3 + 1 + 4 + 14 Irradiation Circuit +15V R4 12 11 R3 10 9 8 D2 C2 -V - - 13 + -15V (ONE OF FOUR) - - - NOTES: 5. +V = 15V 6. -V = -15V 7. Group E Sample Size = 4 Die Per Wafer NOTES: 1. R1 = R2 = R3 = R4 = 1MW, 5%, 1/4W (Min) 2. C1 = C2 = 0.01F/Socket (Min) or 0.1F/Row (Min) 3. D1 = D2 = IN4002 or Equivalent/Board 4. |(V+) - (V-)| = 31V 1V 2 HS-5104ARH Die Characteristics DIE DIMENSIONS: 95 mils x 99 mils x 19 mils 1 mils (2420m x 2530m x 483m 25.4m) INTERFACE MATERIALS: Glassivation: Type: Nitride (SI3N4) over Silox (SIO2, 5% Phos.) Silox Thickness: 12kA 2kA Nitride Thickness: 3.5kA 1.5kA Top Metallization: Type: Al, 1% Cu Thickness: 16kA 2kA Substrate: Bipolar Dielectric Isolation Backside Finish: Silicon ASSEMBLY RELATED INFORMATION: Substrate Potential (Powered Up): Unbiased ADDITIONAL INFORMATION: Worst Case Current Density: <2.0 x 105 A/cm2 Transistor Count: 175 Metallization Mask Layout HS-5104ARH +IN2 V+ +IN1 -IN2 -IN1 OUT2 OUT3 OUT1 OUT4 -IN3 -IN4 +IN3 V- +IN4 All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web site http://www.intersil.com 3 |
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